MRFG35003MT1 데이터 시트보기 (PDF) - Motorola => Freescale

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MRFG35003MT1

Gallium Arsenide PHEMT

Motorola => Freescale 

Freescale Semiconductor, Inc.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Saturated Drain Current

(VDS = 3.5 Vdc, VGS = 0 Vdc)

IDSS

—

Off State Leakage Current

(VGS = –0.4 Vdc, VDS = 0 Vdc)

Off State Drain Current

(VDS = 12 Vdc, VGS = –2.5 Vdc)

Off State Current

(VDS = 28.5 Vdc, VGS = –2.5 Vdc)

IGSS

—

IDSO

—

IDSX

—

Gate–Source Cut–off Voltage

(VDS = 3.5 Vdc, IDS = 6.5 mA)

VGS(th)

–1.2

Quiescent Gate Voltage

(VDS = 12 Vdc, ID = 80 mA)

Power Gain

(VDD = 12 Vdc, IDQ = 55 mA, f = 3.55 GHz)

Output Power, 1 dB Compression Point

(VDD = 12 Vdc, IDQ = 55 mA, f = 3.55 GHz)

Drain Efficiency

(VDD = 12 Vdc, IDQ = 55 mA, Pout = 0.30 W Avg.,

f = 3.55 GHz)

VGS(Q)

Gps

P1dB

hD

–1.2

10

—

23

Adjacent Channel Power Ratio

(VDD = 12 Vdc, Pout = 0.30 W Avg., IDQ = 55 mA,

f = 3.55 GHz, W–CDMA, 8.5 P/A @ 0.01% Probability,

64 CH, 3.84 MCPS)

ACPR

—

Typ

1.3

< 1.0

—

< 1.0

–0.9

–0.9

11.5

3

25

–42

Max

Unit

—

Adc

100

µAdc

450

µAdc

7

mAdc

–0.7

Vdc

–0.7

Vdc

—

dB

—

W

—

%

–40

dBc

MRFG35003MT1

2

MOTOROLA RF DEVICE DATA

For More Information On This Product,

Go to: www.freescale.com

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