BCX58 데이터 시트보기 (PDF) - Infineon Technologies

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BCX58

NPN Silicon AF Transistors

Infineon Technologies 

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 2.5 mA

Base-emitter saturation voltage1)

IC = 100 mA, IB = 2.5 mA

Base-emitter voltage

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

IC = 100 mA, VCE = 1 V 1)

BCX 58

BCX 59

Symbol

Values

Unit

min. typ. max.

VCEsat

–

–

0.5 V

VBEsat

–

–

1.0

VBE(on)

–

0.52 –

0.55 0.65 0.75

–

0.83 –

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

3

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