BCW68 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved
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BCW68 Datasheet PDF : 13 Pages
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Nexperia
BCW68 series
45 V, 800 mA PNP general-purpose transistor
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
0.05
10 0.02
0.01
aaa-026538
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Figure 2. Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
10 Electrical characteristics
Table 7. Electrical characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base
cut-off current
IEBO
emitter-base
cut-off current
VCB = -40 V; IE = 0 A
VCB = -40 V; IE = 0 A; Tj = 150 °C
VEB = -5 V; IC = 0 A
hFE
DC current gain
BCW68F/G/H
VCE = -1 V; IC = -100 μA
BCW68F/G/H
VCE = -1 V; IC = -1 mA
BCW68F/G/H
VCE = -1 V; IC = -10 mA
BCW68F
VCE = -1 V; IC = -100 mA
BCW68G
BCW68H
BCW68F
BCW68G
VCE = -2 V; IC = -500 mA
BCW68H
VCEsat
VBEsat
fT
Cc
collector-emitter
saturation voltage
base-emitter
saturation voltage
transition frequency
collector capacitance
IC = -100 mA; IB = -10 mA
IC = -500 mA; IB = -50 mA
IC = -100 mA; IB = -10 mA
IC = -500 mA; IB = -50 mA
VCE = -5 V; IC = -10 mA; f = 100 MHz
VCB = -10 V; IE = ie = 0 A; f = 1 MHz
[1] pulsed; tp≤ 300 μs; δ ≤ 0.02
BCW68X_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 April 2017
Min Typ Max Unit
-
-
-20 nA
-
-
-5 μA
-
-
-20 nA
100 -
100 -
100 -
[1] 100 -
160 -
250 -
[1] 35 -
60 -
100 -
[1] -
-
[1] -
-
[1] -
-
[1] -
-
80 -
-
5
-
-
-
250
400
600
-
-
-
-350 mV
-450 mV
-1.25 V
-1.25 V
-
MHz
-
pF
© Nexperia B.V. 2017. All rights reserved.
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