EN29F08050S 데이터 시트보기 (PDF) - Eon Silicon Solution Inc.

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EN29F08050S

8 Megabit (1024K x 8-bit) Flash Memory

Eon Silicon Solution Inc. 

EN29F080

Table 11. ERASE AND PROGRAMMING PERFORMANCE

Parameter

Sector Erase Time

Chip Erase Time

Byte Programming Time

Chip Programming Time

Erase/Program Endurance

Typ

0.3

3

7

2

100K

Limits

Max

5

35

200

5

Unit

sec

sec

µs

sec

cycles

Comments

Excludes 00H programming prior

to erasure

Excludes system level overhead

Minimum 100K cycles guaranteed

Table 12. LATCH UP CHARACTERISTICS

Parameter Description

Input voltage with respect to Vss on all pins except I/O pins

(including A9 and OE )

Input voltage with respect to Vss on all I/O Pins

Vcc Current

Min

-1.0 V

-1.0 V

200 mA

Max

12.0 V

Vcc + 1.0 V

200 mA

Table 13. 32-PIN PLCC PIN CAPACITANCE @ 25°C, 1.0MHz

Parameter Symbol

Parameter Description

Test Setup

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0

4

6

pF

COUT

Output Capacitance

VOUT = 0

8

12

pF

CIN2

Control Pin Capacitance

VIN = 0

8

12

pF

Table 14. 32-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz

Parameter Symbol

Parameter Description

Test Setup

Typ

Max

CIN

Input Capacitance

VIN = 0

6

7.5

COUT

Output Capacitance

VOUT = 0

8.5

12

CIN2

Control Pin Capacitance

VIN = 0

7.5

9

Unit

pF

pF

pF

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28

Santa Clara, CA 95054

Tel: 408-235-8680

Fax: 408-235-8685

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