IRF9530NPBF 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd
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IRF9530NPBF Datasheet PDF : 7 Pages
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IRF9530NPBF
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.3
2.0
10
TJ = 150 °C
1.7
1
TJ = 25 °C
1.4
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ID = 250 μA
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1900
1800
Ciss
1700
1600
800
Coss
Crss
0
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
2.2
ID = 14 A
1.9
VGS = 10 V
1.6
1.3
VGS = 4.5 V
1.0
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1.1
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
51
ID = 250 μA
49
47
45
43
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
40
30
20
10
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating
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