NLASB3157 데이터 시트보기 (PDF) - ON Semiconductor
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NLASB3157 Datasheet PDF : 10 Pages
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NLASB3157
DC ELECTRICAL CHARACTERISTICS − NLASB3157
Symbol
Parameter
Test Conditions
VCC
TA = +255C
TA = −405C to +855C
(V)
Min
Typ
Max
Min
Max Unit
VIH
HIGH Level
Input Voltage
VIL
LOW Level
Input Voltage
IIN
Input Leakage Current 0 v VIN v 5.5 V
IOFF
OFF State Leakage 0 v A, B v VCC
Current
1.65−1.95
2.3−5.5
1.65−1.95
2.3−5.5
0−5.5
1.65−5.5
"0.05
"0.05
"0.1
"0.1
0.75 VCC
V
0.7 VCC
0.25 VCC V
0.3 VCC
"1
mA
"1
mA
RON
ICC
Switch On Resistance
(Note 3)
Quiescent Supply
Current
All Channels ON or
OFF
VIN = 0 V, IO = 30 mA
VIN = 2.4 V, IO = −30 mA
VIN = 4.5 V, IO = −30 mA
VIN = 0 V, IO = 24 mA
VIN = 3 V, IO = −24 mA
VIN = 0 V, IO = 8 mA
VIN = 2.3 V, IO = −8 mA
VIN = 0 V, IO = 4 mA
VIN = 1.65 V, IO = −4 mA
VIN = VCC or GND
IOUT = 0
4.5
3.0
2.3
1.65
5.5
3.0
5.0
7.0
4.0
10
5.0
13
6.5
17
1.0
7.0
W
12
15
9.0
W
20
12
W
30
20
W
50
10
mA
Analog Signal Range
VCC
0
VCC
0
VCC
V
RRANGE
On Resistance
Over Signal Range
(Note 3) (Note 7)
IA = −30 mA, 0 v VBn
v VCC
IA = −24 mA, 0 v VBn
v VCC
IA = −8 mA, 0 v VBn
v VCC
IA = −4 mA, 0 v VBn
v VCC
4.5
3.0
2.3
1.65
25
W
50
100
300
DRON On Resistance Match IA = −30 mA, VBn = 3.15
4.5
0.15
W
Between Channels
IA = −24 mA, VBn = 2.1
3.0
0.2
(Note 3) (Note 4)
IA = −8 mA, VBn = 1.6
2.3
0.5
(Note 5)
IA = −4 mA, VBn = 1.15
1.65
0.5
Rflat
On Resistance
IA = −30 mA, 0 v VBn
5.0
6.0
W
Flatness (Note 3)
v VCC
(Note 4) (Note 6)
IA = −24 mA, 0 v VBn
3.3
12
v VCC
IA = −8 mA, 0 v VBn
2.5
28
v VCC
IA = −4 mA, 0 v VBn
1.8
125
v VCC
3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower
of the voltages on the two (A or B Ports).
4. Parameter is characterized but not tested in production.
5. DRON = RON max − RON min measured at identical VCC, temperature and voltage levels.
6. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.
7. Guaranteed by Design.
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