OPB817 데이터 시트보기 (PDF) - Optek Technology
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OPB817 Datasheet PDF : 2 Pages
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Type OPB817
Electrical Characteristics (TA = 25o C unless otherwise noted)
SYMBOL
PARAMETER
Input Diode
VF
Forward Voltage
IR
Reverse Current
Phototransistor
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)ECO Emitter-Collector Breakdown Voltage
I CEO
Coupled
Collector-Emitter Leakage Current
IC(ON) On-State Collector Current
VCE(SAT) Collector-Emitter Saturation Voltage
MIN MAX UNITS
TEST CONDITIONS
1.8
V IF = 20 mA
100 µA VR = 2 V
30
5.0
100
V IC = 1 mA, IF = 0, Ee = 0
V IE = 100 µA, IF = 0, Ee = 0
nA VCE = 10 V, IF = 0, Ee = 0
1.0 10
0.40
mA VCE = 5.0, IF = 20 mA
V IC = 100 µA, IF = 20 mA
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
30
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