SD1002 데이터 시트보기 (PDF) - Sirectifier Electronics
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SD1002 Datasheet PDF : 2 Pages
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SD10
Discrete Diodes
C(TABC)(TAB)
A
C
A
C
A=Anode, C=Cathode, TAB=Cathode
SD1001
SD1002
SD1004
SD1008
SD1010
SD1012
SD1016
VRSM
V
200
300
500
900
1100
1300
1700
VRRM
V
100
200
400
800
1000
1200
1600
Dimensions TO-220AC
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
0.230 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Symbol
Test Conditions
Maximum Ratings
Unit
IF(AV)M
IFSM
I2t
TC=95oC; 180o sine
TVJ=45oC;
VR =0V;
TVJ=150oC;
VR =0V;
TVJ=45oC;
VR =0V;
TVJ=150oC;
VR =0V;
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
10
A
150
175
125
A
170
230
260
200
A2s
220
TVJ
TVJM
Tstg
-40...+150
150
oC
-40...+150
Md Mounting torque
0.4...0.6
Nm
Sirectifier Weight
Symbol
Test Conditions
IR
TVJ=TVJM; VR=VRRM
VF
IF=10A; TVJ=25oC
2
g
Characteristic Values
Unit
<_ 1
mA
<_ 1.25
V
VTO For power-loss calculations only
0.85
V
rT
TVJ=TVJM
16
m
RthJC DC current
1.29
K/W
P1
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