SFH309P 데이터 시트보기 (PDF) - Infineon Technologies

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SFH309P

Silicon NPN Phototransistor

Infineon Technologies 

Bezeichnung

Parameter

Fotostrom, λ = 950 nm

Photocurrent

Ee = 0.5 mW/cm2, VCE = 5 V

SFH 309 P:

Ev = 1000 Ix, Normlicht/standard light A,

VCE = 5 V

Anstiegszeit/Abfallzeit

Rise and fall time

IC = 1 mA, VCC = 5 V, RL = 1 kΩ

Kollektor-Emitter-Sättigungsspannung

Collector-emitter saturation voltage

IC = 20 µA, Ee = 0.5 mW/cm2

Directional Characteristics Srel = f (ϕ)

Symbol

Symbol

IPCE

IPCE

tr, tf

VCEsat

SFH 309 P, SFH 309 PFA

Wert

Value

Einheit

Unit

≥ 63

µA

420

µA

6

µs

150

mV

2001-02-22

4

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