TGF2021-08 데이터 시트보기 (PDF) - Tyco Electronics
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TGF2021-08 Datasheet PDF : 8 Pages
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SYMBOL
Power Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
ΓL 3/, 4/
Efficiency Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
ΓL 3/, 4/
Advance Product Information
September 19, 2005
TABLE III
RF CHARACTERIZATION TABLE 1/
(TA = 25 °C, Nominal)
TGF2021-08
PARAMETER
Vd = 10V
Idq = 600mA
Vd = 12V
Idq = 600mA
UNITS
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
39.8
50
11
3.33
3.705
0.920 ∠ 176.3
40.5
48
11
3.99
3.811
0.920 ∠ 175.4
dBm
%
dB
Ω
pF
-
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
39
59
11.5
6.13
4.308
0.937 ∠ 173.8
39.7
55
11
6.95
4.042
0.935 ∠ 173.2
dBm
%
dB
Ω
pF
-
1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV
THERMAL INFORMATION
Parameter
θJC Thermal Resistance
(channel to backside of carrier)
Test Conditions
Vd = 12 V
Idq = 600 mA
Pdiss = 7.2 W
TCH
TJC
TM
(oC) (qC/W) (HRS)
148
10.8 1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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