PUMZ1 데이터 시트보기 (PDF) - Unisonic Technologies

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PUMZ1

NPN/PNP GENERAL PURPOSE TRANSISTORS

Unisonic Technologies 

PUMZ1

Preliminary

NPN/PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Per Transistor; For The PNP Transistor With Negative Polarity

Collector- Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

5

V

Collector Current (DC)

IC

100

mA

Peak Collector Current

ICM

200

mA

Total Power Dissipation

PD

300

mW

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Device mounted on an FR4 printed-circuit board.

„ THERMAL DATA

PARAMETER

SYMBOL

Junction to Ambient

θJA

Note: Device mounted on an FR4 printed-circuit board.

RATINGS

416

„ ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified.)

UNIT

K/W

PARAMETER

SYMBOL

TEST CONDITIONS

Per Transistor; For The PNP Transistor With Negative Polarity

Collect Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage(Note)

Collector Capacitance

TR1

TR2

ICBO

IEBO

hFE

VCE(SAT)

CC

VCB =30V, IE =0

VCB =30V, IE =0, TJ =150°C

VEB =4V, IC =0

VCE =6V, IC =1mA

IC =50mA, IB =5mA

IE =ie =0; VCB =12V; f =1MHz

Transition Frequency

Note: Pulse test: tP ≤ 300 μs; δ ≤ 0.02.

fT

VCE =12V, IC =2mA, f =100MHz

MIN TYP MAX UNIT

100 nA

10 μA

100 nA

120

200 mV

1.5 pF

2.2 pF

100

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R218-011.b

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