H5N2509P(2005) 데이터 시트보기 (PDF) - Renesas Electronics
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H5N2509P Datasheet PDF : 7 Pages
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H5N2509P
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
VGS = 10 V
160
ID = 30 A
120
80
15 A
5A
40
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
1000
di / dt = 100 A / µs
500 VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3
10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
ID = 30 A
VGS
400
16
VDD = 50 V
100 V
300
200 V
12
VDS
200
8
100
0
0
VDD = 200 V
4
100 V
50 V
0
40 80 120 160 200
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
50
Tc = –25°C
20
10
5
25°C
2
75°C
1
0.5
0.2
0.2 0.5 1 2
VDS = 10 V
Pulse Test
5 10 20 50 100
Drain Current ID (A)
50000
20000
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
2000
1000
500
200
100
50
0
Coss
Crss
20 40 60 80 100
Drain to Source Voltage VDS (V)
Switching Characteristics
10000
VGS = 10 V, VDD = 125 V
PW = 10 µs, duty ≤ 1 %
RG = 10 Ω
1000
td(off)
100
tf
10
0.1 0.3
tr
13
td(on)
10 30 100
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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