C4957-T1 데이터 시트보기 (PDF) - Renesas Electronics
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C4957-T1
Renesas Electronics
C4957-T1 Datasheet PDF : 9 Pages
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2SC4957
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO VEB = 1 V, IC = 0 mA
h Note 1
FE
VCE = 3 V, IC = 10 mA
fT
VCE = 3 V, IC = 10 mA
S21e2 VCE = 3 V, IC = 10 mA, f = 2.0 GHz
NF VCE = 3 V, IC = 3 mA, f = 2.0 GHz
C Note 2
re
VCB = 3 V, IE = 0 mA, f = 1.0 MHz
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
T83
T83
75 to 150
MIN. TYP. MAX. Unit
−
−
100
nA
−
−
100
nA
75
−
150
−
−
12
–
GHz
9
11
−
dB
−
1.5
2.5
dB
−
0.3
0.5
pF
2
Data Sheet PU10520EJ01V0DS
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