KF4N80F 데이터 시트보기 (PDF) - MORNSUN Science& Technology Ltd.
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KF4N80F Datasheet PDF : 6 Pages
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
·VDSS=800V, ID=4A
·Drain-Source ON Resistance :
RDS(ON)(Max)=2.6Ω @VGS=10V
·Qg(typ.)= 17nC
KF4N80F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
L
M
D
NN
123
C
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
MAXIMUM RATING (Tc=25℃)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
Drain Current @TC=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above 25℃
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
800
±30
4*
2.5*
11*
250
4.7
4.5
43
0.34
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Characteristics
150
-55～150
Thermal Resistance, Junction-to-Case RthJC
2.9
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/℃
℃
℃
℃/W
℃/W
TO-220IS (1)
PIN CONNECTION
D
G
S
2012. 9. 5
Revision No : 0
1/6
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