KF5N60P 데이터 시트보기 (PDF) - KEC
부품명
상세내역
제조사
KF5N60P Datasheet PDF : 7 Pages
| |||
KF5N60P/F
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
BVDSS
ID=250㎂ , VGS=0V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
Drain Cut-off Current
IDSS
VDS=600V, VGS=0V,
Gate Threshold Voltage
Vth
VDS=VGS, ID=250㎂
Gate Leakage Current
IGSS
VGS=±30V, VDS=0V
Drain-Source ON Resistance
RDS(ON)
VGS=10V, ID=2.25A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=480V, ID=4.5A
VGS=10V
(Note4,5)
Qgd
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
td(on)
tr
td(off)
tf
VDD=300V
ID=4.5A
RG=25Ω
(Note4,5)
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
Crss
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD
IS=4.5A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=4.5A, VGS=0V,
Qrr
dIs/dt=100A/㎲
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=12.7mH, IS=4.5A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤4.5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
600
-
-
V
-
0.61
-
V/℃
-
-
10
㎂
2.5
-
4.5
V
-
- ±100 nA
-
1.7
2.0
Ω
-
11
-
-
2.8
-
nC
-
4.5
-
-
15
-
-
16
-
ns
-
30
-
-
15
-
-
520
-
-
60
-
pF
-
5.5
-
-
-
4.5
A
-
-
18
-
-
1.4
V
-
270
-
ns
-
1.8
-
μC
1
1
KF5N60
P 001
2
KF5N60
F 001
2
1 PRODUCT NAME
2 LOT NO
2010. 11. 4
Revision No : 0
2/7
Share Link: 