STI8N65M5(2012) 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
제조사
STI8N65M5
(Rev.:2012)
(Rev.:2012)
STMicroelectronics
STI8N65M5 Datasheet PDF : 26 Pages
| |||
Electrical characteristics
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on-
resistance
VGS = 10 V, ID = 3.5 A
Min. Typ. Max. Unit
650
V
1 µA
100 µA
±100 nA
3
4
5
V
0.56 0.60 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
690
pF
-
18
- pF
2
pF
Co(er)(1)
Equivalent output
capacitance energy
related
VGS = 0, VDS = 0 to 520 V
-
17
- pF
Co(tr)(2)
Equivalent output
capacitance time
related
VGS = 0, VDS = 0 to 520 V
-
52
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
2
4
6
Ω
Qg Total gate charge
VDD = 520 V, ID = 3.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 19)
15
nC
-
3.6
- nC
6
nC
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS
4/26
Doc ID 16531 Rev 5
Share Link: 