1EDF5673K 데이터 시트보기 (PDF) - Infineon Technologies

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1EDF5673K

GaN EiceDRIVER™ product family

Infineon Technologies 

1EDF5673K, 1EDF5673F, 1EDS5663H

GaN gate driver

Isolation specifications

Table 12 Package characteristics (PG-TFLGA-13-1)

Parameter

Symbol

Values

Min.

Typ.

Comparative tracking Index of CTI

package mold

400

–

Material group

–

–

II

Max.

600

–

Unit Note or Test Condition

V

according to DIN EN

60112 (VDE 0303-11)

–

according to IEC 60112

7.1.2 Functional isolation in NB PG-DSO-16-11 package (1EDF5673F)

Table 13 Functional isolation input-to-output (NB PG-DSO-16-11)

Parameter

Symbol

Values

Unit Note or Test Condition

Min.

Typ.

Max.

Functional isolation test

VIO

voltage

1500

–

–

VDC impulse test > 10 ms,

sample tested

Maximum isolation working VIOWM

510

–

voltage

–

VRMS according to IEC 60664-1

(PD2; MG II)1)

Package clearance

CLR

–

4.0

– mm shortest distance over air,

from any input pin to any

output pin

Package creepage

CPG

–

4.0

– mm shortest distance over

surface, from any input

pin to any output pin

Common Mode Transient CMTI

200

Immunity

Capacitance input-to-output1) CIO

–

Resistance input-to-output1) RIO

–

1) verified by design, not tested in production

–

2

>1000

– V/ns according to VDE V0884-

10, static and dynamic

test

– pF –

– MΩ –

Table 14 Package characteristics (NB PG-DSO-16-11)

Parameter

Symbol

Values

Min.

Typ.

Comparative tracking Index of CTI

package mold

400

–

Material group

–

–

II

Max.

600

–

Unit Note or Test Condition

V

according to DIN EN 60112

(VDE 0303-11)

–

according to IEC 60112

Final datasheet

24

Rev. 2.3

2020-10-22

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