1EDF5673K 데이터 시트보기 (PDF) - Infineon Technologies

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1EDF5673K

GaN EiceDRIVER™ product family

Infineon Technologies 

1EDF5673K, 1EDF5673F, 1EDS5663H

GaN gate driver

Isolation specifications

Table 17 Reinforced input-to-output isolation according to UL1577 Ed 5 (WB PG-DSO-16-30)

Parameter

Symbol

Values

Unit Note or Test Condition

Min.

Typ.

Max.

Withstand isolation VISO

voltage

5700

–

–

VRMS VISO= 5700 VRMS for t = 60 s

(qualification);

VISO_test > 1.2 x VISO = 6840 V for t = 1 s

7.3

Safety-limiting values

Table 18 Reinforced isolation safety-limiting values as outlined in VDE-0884-10 (WB PG-DSO-16-30)

Parameter

Side

Values

Unit Note or Test Condition

Safety supply power

Input

Output

Total

Min.

–

–

–

Typ.

–

–

–

Max.

20.0 mW

2100 mW

2120 mW

RthJA = 59 K/W1),

TA = 25°C,

TJ = 150°C

Safety supply current Output

–

–

265 mA

Safety temperature Ts

–

–

150 °C

1) Calculated with the Rth of WB-DSO-16-30 package (see Table 4)

RthJA = 59 K/W1),

VDDO = 8 V,

TA= 25°C, TJ = 150°C

Ts = TJ,max

According to VDE0884-10 and UL1577, safety-limiting values define the operating conditions under which the

isolation barrier can be guaranteed to stay unaffected. This corresponds with the maximum allowed junction

temperature, as temperature-induced failures might cause significant overheating and eventually damage the

isolation barrier.

Final datasheet

26

Rev. 2.3

2020-10-22

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