SI3430DV 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI3430DV Datasheet PDF : 10 Pages
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www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.4
0.3
TJ = 150 °C
0.2
Si3430DV
Vishay Siliconix
ID = 2.4 A
TJ = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.4
0.2
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-50 -25
ID = 250 µA
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.1
0.0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power
S19-0836-Rev. E, 30-Sep-2019
4
Document Number: 71235
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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