SI3585CDV 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI3585CDV Datasheet PDF : 16 Pages
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Si3585CDV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.5
2
1.5
1
0.5
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
1.6
1.0
0.8
1.2
0.6
0.8
0.4
0.4
0.2
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 67470
10
S13-1562-Rev. C, 15-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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