SI3585CDV 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI3585CDV Datasheet PDF : 16 Pages
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Si3585CDV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
1.5
VGS = 5 V thru 3 V
VGS = 2.5 V
4
1.2
3
0.9
2
VGS = 2 V
0.6
TC = 25 °C
1
VGS = 1.5 V
0
0
0.5
1
1.5
2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.3
0
0
TC = 125 °C
TC = - 55 °C
0.5
1
1.5
2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.30
0.24
VGS = 2.5 V
0.18
0.12
VGS = 4.5 V
0.06
0
1
2
3
4
5
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 1.9 A
8
VDS = 5 V
6
VDS = 10 V
4
VDS = 16 V
2
360
300
240
Ciss
180
120
Coss
60
Crss
0
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.5
ID = 1.9 A
1.3
VGS = 2.5 V
1.1
0.9
0
0
1.5
3
4.5
6
Qg - Total Gate Charge (nC)
Gate Charge
0.7
VGS = 4.5 V
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 67470
8
S13-1562-Rev. C, 15-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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