SI3585CDV 데이터 시트보기 (PDF) - Vishay Semiconductors

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SI3585CDV

N- and P-Channel 20 V (D-S) MOSFET

Vishay Semiconductors 

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10

0.3

TJ = 150 °C

0.24

1

0.18

TJ = 25 °C

0.12

Si3585CDV

Vishay Siliconix

ID = 1.9 A

TJ = 125 °C

TJ = 25 °C

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

1.15

1

0.85

ID = 250 μA

0.7

0.55

- 50 - 25 0

25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

10

Limited by RDS(on)*

0.06

0

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

25

20

15

10

5

0

0.001

0.01

0.1

1

10

Time (s)

Single Pulse Power

1

1 ms

10 ms

0.1

100 ms

1 s, 10 s

DC

TA = 25 °C

Single Pulse

0.01

BVDSS Limited

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

Document Number: 67470

For technical questions, contact: pmostechsupport@vishay.com

www.vishay.com

S13-1562-Rev. C, 15-Jul-13

9

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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