BTA312X-800C 데이터 시트보기 (PDF) - WeEn Semiconductors

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BTA312X-800C

3Q Hi-Com Triac

WeEn Semiconductors 

BTA312X-800C

3Q Hi-Com Triac

19 September 2018

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack"

plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt

can occur. This "series C" triac will commutate the full rated RMS current at the maximum rated

junction temperature without the aid of a snubber.

2. Features and benefits

• 3Q technology for improved noise immunity

• High commutation capability with maximum false trigger immunity

• High immunity to false turn-on by dV/dt

• High voltage capability

• Isolated mounting base package

• Less sensitive gate for high noise immunity

• Planar passivated for voltage ruggedness and reliability

• Triggering in three quadrants only

3. Applications

• Electronic thermostats (heating and cooling)

• High power motor controls e.g. washing machines and vacuum cleaners

• Rectifier-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

VDRM

repetitive peak off-

state voltage

IT(RMS)

RMS on-state current full sine wave; Th ≤ 59 °C; Fig. 1;

Fig. 2; Fig. 3

ITSM

non-repetitive peak on- full sine wave; Tj(init) = 25 °C;

state current

tp = 20 ms; Fig. 4; Fig. 5

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

Tj

junction temperature

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

Min Typ Max Unit

-

-

800 V

-

-

12

A

-

-

100 A

-

-

110 A

-

-

125 °C

2

-

35

mA

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