BTA312X-800CT(2018) 데이터 시트보기 (PDF) - WeEn Semiconductors
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BTA312X-800CT Datasheet PDF : 12 Pages
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WeEn Semiconductors
BTA312X-800CT
3Q Hi-Com Triac
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Th ≤ 84 °C;
Fig. 1; Fig. 2; Fig. 3
ITSM
non-repetitive peak on-
full sine wave; tp = 20 ms; Tj(init) = 25 °C;
state current
Fig. 4; Fig. 5
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C
I2t
I2t for fusing
tp = 10ms; sine wave
dIT/dt
rate of rise of on-state
current
IG = 70mA
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
Values
800
12
100
110
50
100
2
5
0.5
-40 to 150
150
Unit
V
A
A
A
A2s
A/μs
A
W
W
°C
°C
16
IT(RMS)
(A)
12
8
4
bhdc1-001
84°C
100
IT(RMS)
(A)
80
60
40
20
bhdc1-002
0
-50
0
50
100
150
Th (°C)
Fig. 1. RMS on-state current as a function of heatsink
temperature; maximum values
0
10-2
10-1
1
10
surge duration (s)
f = 50Hz; Th = 84 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA312X-800CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 April 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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