ASB0340 데이터 시트보기 (PDF) - Anachip Corporation
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ASB0340 Datasheet PDF : 3 Pages
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SMD Schottky Barrier Diode
ASB0320/30/40
Maximum Rating (at TA=25ºC unless otherwise noted)
Symbol
VRRM, VR
VR(RMS)
Parameter
Repetitive peak reverse voltage
Reverse voltage
RMS reverse voltage
IO
IFRM
IFSM
TSTG
Average forward rectified current
Repetitive peak forward current
Forward current, surge peak 8.3 ms
single half sine-wave
Storage temperature
Tj
Junction temperature
ASB0320 ASB0330 ASB0340 Unit
20
30
40
V
14
21
28
V
350
mA
450
mA
1.5
A
-40 to +125
ºC
-40 to +125
ºC
Electrical Characteristics (at TA=25ºC unless otherwise noted)
Symbol
Parameter
VF
Forward voltage
ASB0320
IR
Reverse current
ASB0330
ASB0340
CT
Capacitance between terminals
Trr Reverse recovery time
Conditions
IF=20mA
IF=200mA
VR=10V
VR=20V
VR=30V
f=1MHz, and 0 VDC
reverse voltage
IF=IR=10mA, Irr=0.1 × IR,
RL=100 ohm
Min. Typ. Max. Unit
-
-
0.37
V
-
-
0.6
-
-
5
-
-
5
uA
-
-
5
-
50
-
pF
-
6.4
-
nS
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 2, 2004
2/3
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