BCX51-16-G 데이터 시트보기 (PDF) - ComChip

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BCX51-16-G

General Purpose Transistor

ComChip 

General Purpose Transistor

Electrical Characteristics (at TA=25°C unless otherwise noted)

Parameter

Symbol

Conditions

Min

BCX51

-45

Collector-base breakdown voltage

V(BR)CBO IC = -100µA , IE = 0 BCX52

-60

Collector-emitter breakdown voltage V(BR)CEO* IC = -10mA, IB = 0

BCX53

BCX51

BCX52

-100

-45

-60

Emitter-base breakdown voltage

BCX53

-80

V(BR)EBO IE = -100µA , IC = 0

-5

Collector cut-off current

ICBO

VCB = -30V , IE = 0

Emitter cut-off current

IEBO

VEB = -5V , IC = 0

hFE(1)* VCE = -2V , IC = -5mA

63

DC current gain

hFE(2)* VCE = -2V , IC = -150mA

63

hFE(3)* VCE = -2V , IC = -0.5A

40

Collector-emitter saturation voltage VCE(sat)* IC = -0.5A , IB = -50mA

Base-emitter saturation voltage

VBE*

VCE = -2V , IC = -0.5A

Transition frequency

VCE = -5V , IC = -10mA

fT

f = 100MHZ

* Pulse test

Classification Of hFE(2)

Part No.

BCX51-16-G

BCX52-16-G

Range

100-250

100-250

Typ Max Unit

V

V

V

-0.1

µA

-0.1

µA

250

-0.5

V

-1

V

50

MHz

BCX53-16-G

100-250

Company reserves the right to improve product design , functions and reliability without notice.

QW-BTR49

Comchip Technology CO., LTD.

REV:A

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