BDT88 데이터 시트보기 (PDF) - New Jersey Semiconductor

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BDT88

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BDT82

Collector-Emitter

VcEO(SUS) Sustaining Voltage

BDT84

BDT86

!„— QHrnA !„ — ft

BDT88

VcE(sat)-1 Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A

VcE(sat)-2 Collector-Emitter Saturation Voltage |c= -7A;|B= -0.7A

VBE(OII) Base-Emitter On Voltage

lc= -5A ; VCE= -4V

ICES

Collector Cutoff Current

VCE= O.SVcBOma*; VBE= 0

ICBO

Collector Cutoff Current

VCB= VcBOmax; !E= 0

IEBO

hpE-1

hpE-2

Emitter Cutoff Current

DC Current Gain

DC Current Gain

VEB= -7V; lc= 0

lc= -50mA ;VCE= -10V

lc=-5A;VCE=-4V

fy

Current-Gain—Bandwidth Product lc=-0.5A;VCE=-10V

Switching Times

ton

Turn-On Time

toff

Turn-Off Time

i

7A- 1

|_ n 7A

BDT82/84/86/88

MIN TYP. MAX UNIT

-60

-80

V

-100

-120

-1.0 V

-1.6 V

-1.5 V

-1 mA

-0.2 mA

-0.1 mA

40

40

20

MHz

1

VS

2

iJ S

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