BDX66 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BDX66 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
BDX66/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX66
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDX66A
BDX66B '
BDX66C
VcE(sat) Collector-Emitter Saturation Voltage lc=-10A; lB=-40mA
VeE(on)
VECF
Base-Emitter On Voltage
C-E Diode Forward Voltage
lc=-10A; VCE=-3V
IF=-10A
ICEO
Collector Cutoff Current
VCE= /2VcEOmax; !B= 0
BDX66
VCB= -40V;IE= 0;Tj= 200"C
BDX66A Vca= -50V;IE= 0;Tj= 200'C
ICBO
Collector Cutoff Current
BDX66B VCB= -60V;IE= 0;Tj= 200 "C
BDX66C VOB= -70V;IE= 0;Tj= 200'C
ICBO Collector Cutoff Current
VCB= VcBOmax;lE= 0
IEBO Emitter Cutoff Current
VEB= -5V; lc=0
hpE-1
DC Current Gain
lc=-1A; VCE=-3V
hFE-2
DC Current Gain
lc=-10A; VCE=-3V
hFE-3
DC Current Gain
lc=-16A;VCE=-3V
COB Output Capacitance
IE=0; VCB=-10V;ftest=1MHz
Switching times
ton
Turn-on Time
toff
Turn-off Time
|_— 1flA- In* — Ir, AfimA
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2
V
-2.5
V
-2
V
-1
mA
-5
mA
-1
rnA
-5
mA
2000
1000
1000
300
pF
1
us
3.5
PS
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