BAW56 데이터 시트보기 (PDF) - Diode Semiconductor Korea

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BAW56

Surface mount switching diode

Diode Semiconductor Korea 

Diode Semiconductor Korea

Surface mount switching diode

BAW56

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Symbol

V(BR)R

Forward Voltage

VF

Reverse Leakage Current

IR

Diode Capacitance

CD

Reverse Recovery Time

trr

Min MAX

75

-

715

855

-

1000

1250

2.5

-

25

-

2

-

4

UNIT

V

V

μA

nA

pF

ns

Test Condition

IR= 2.5μA

IF=1mA

IF=10mA

IF=50mA

IF=150mA

VR=75V

VR=20V

VR=0V,f=1MHz

IF=IR=10mA,

Irr=0.1* IR,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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