STW8NB100 데이터 시트보기 (PDF) - STMicroelectronics
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STW8NB100 Datasheet PDF : 5 Pages
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STW8NB100
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 500 V
RG = 4.7 Ω
ID = 3.5 A
VGS = 10 V
Min.
Typ.
32
13
Max.
Unit
ns
ns
Qg
Total Gate Charge
VDD = 800 V ID = 7 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
68
95
nC
16
nC
31
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 800 V
RG = 4.7 Ω
ID = 7 A
VGS = 10 V
Min.
Typ.
32
32
40
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 8 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 8 A
VDD = 100 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
8
32
Unit
A
A
1.6
V
1000
ns
11
µC
21
A
3/5
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