S17NF3LL 데이터 시트보기 (PDF) - STMicroelectronics

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S17NF3LL

N-channel 30V - 0.0045Ω - 17A - SO-8 STripFET™ II Power MOSFET for DC-DC conversion

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STS17NF3LL

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

Zero gate voltage

drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250µA, VGS =0

VDS = max rating

VDS =max rating,

TC = 125°C

VGS = ± 18V

VDS = VGS, ID = 250µA

VGS = 10V, ID = 8.5A

VGS = 4.5V, ID = 8.5A

30

V

1

µA

10

µA

±100 nA

1

V

0.0045 0.0055 Ω

0.0055 0.007 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Forward

transconductance

VDS = 10V, ID = 8.5A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 15V, ID = 8.5A

RG = 4.7Ω VGS = 4.5V

(see Figure 13)

Qg

Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 24V, ID = 12.5A,

VGS = 4.5V, RG = 4.7Ω

(see Figure 14)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Min. Typ. Max. Unit

37

S

2160

pF

614

pF

98

pF

23.5

ns

39

ns

47.5

ns

37

ns

26

35

nC

7

nC

12

nC

4/12

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