STB100NF04T4(2016) 데이터 시트보기 (PDF) - STMicroelectronics

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STB100NF04T4
(Rev.:2016)

Automotive-grade N-channel 40 V, 4.3 mΩ typ., 120 A STripFET™ II Power MOSFET in a D²PAK and TO-220

STMicroelectronics 

STB100NF04T4, STP100NF04

Electrical characteristics

Figure 18: Allowable Iav vs. time in avalanche

The previous curve give the safe operating area for unclamped inductive loads, single

pulse or repetitive, under the following conditions:

PD(AVE) = 0.5*(1.3*BVDSS*IAV)

EAS(AR)= PD(AVE)*TAV

Where:

IAV is the allowable current in avalanche

PD(AVE) is the average power dissipation in avalnche(single pulse)

tAV is the time in avalanche

To de rate above 25°C, at fixed IAV, the following equation must be applied:

IAV= 2*(Tjmax-TCASE)/(1.3*BVDSS*Zth)

Where:

Zth= K*Rth is the value coming from normalized thermal response at fixed pulse width

equal to TAV

DocID9969 Rev 7

9/20

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