STP55NF06L 데이터 시트보기 (PDF) - STMicroelectronics
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STP55NF06L
STMicroelectronics
STP55NF06L Datasheet PDF : 12 Pages
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STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgs
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
Test Conditions
VDD = 30 V, ID = 27.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 48 V, ID = 55 A,
VGS = 4.5V
Test Conditions
VDD = 30 V, ID = 27.5 A,
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 5)
Min. Typ. Max. Unit
20
ns
100
ns
27
37
nC
7
nC
10
nC
Min.
Typ.
40
20
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 55 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 55A, di/dt = 100A/µs,
VDD = 30 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
55
A
220
A
1.3
V
80
ns
200
nC
5
A
Safe Operating Area For TO-220/D2PAK/I2PAK ThermalImpedanceforTO-220/D2PAK/I2PAK
3/12
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