STD12NF06(2007) 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

STD12NF06
(Rev.:2007)

N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD12NF06 - STD12NF06-1

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM

VSD(1)

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 12A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12A,

di/dt = 100A/µs,

VDD = 30V, TJ = 150°C

Figure 15 on page 8

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

12 A

48 A

1.3 V

50

ns

65

µC

3.5

A

5/14

Share Link: