STP45NF06(2010) 데이터 시트보기 (PDF) - STMicroelectronics

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STP45NF06
(Rev.:2010)

N-channel 60 V, 0.023 Ω, 38 A TO-220, D2PAK STripFETTM II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB45NF06, STP45NF06

(TCASE=25°C unless otherwise specified).

Table 5. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

IDSS

Zero gate voltage drain

current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

ID = 250µA, VGS= 0

VDS = Max rating,

VDS = Max rating @125°C

VGS = ±20V

VDS= VGS, ID = 250µA

VGS= 10V, ID= 19A

60

V

1 µA

10 µA

±100 nA

2

3

4

V

0.023 0.028 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS > ID(on) x RDS(on)max,

ID =19 A

VDS =25V , f=1 MHz,

VGS=0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 48 V, ID = 34 A

VGS = 10V

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

18

S

920

pF

- 225

pF

80

pF

32 58 nC

- 6.5

nC

14.5

nC

Table 7. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

rise time

td(off)

tf

Turn-off delay time

fall time

Test conditions

VDD=30 V, ID=17 A,

RG=4.7 Ω, VGS= 10 V

(see Figure 13)

VDD=30V, ID=17 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13)

Min. Typ. Max. Unit

12

ns

50

ns

30

ns

10

ns

4/15

Doc ID 7433 Rev 5

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