BSH103 데이터 시트보기 (PDF) - Philips Electronics

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BSH103

N-channel enhancement mode MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode

MOS transistor

handbook, h4alfpage

ID

(A)

3

2

1

0

0

1

MBK506

2 VGS (V) 3

Product specification

BSH103

handboo3k,0h0alfpage

C

(pF)

200

MBK504

100

Ciss

Coss

0

Crss

0

10

20

30

VDS (V)

VDS = 10 V; Tamb = 25 °C; tp = 300 µs; δ = 0.

Fig.8 Transfer characteristic; typical values.

VGS = 0 ; f = 1 MHz; Tamb = 25 °C.

Fig.9 Capacitance as a function of drain-source

voltage; typical values.

handbooIkS, h2alfpage

(A)

1.6

MBK508

1.2

0.8

(1)

(2) (3)

0.4

0

0

0.4

0.8 VSD (V) 1.2

VGD = 0.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −65 °C.

Fig.10 Source current as a function of source-drain

diode forward voltage; typical values.

10

handbook, halfpage

RDSon

(Ω)

(1) (2) (3) (4)

(5) (6)

1

MBK509

10−1

0

2

4

6

8

10

VGS (V)

Tamb = 25 °C; tp = 300 µs; δ = 0.

(1) ID = 0.1 A.

(2) ID = 0.22 A.

(3) ID = 0.45 A.

(4) ID = 0.9 A.

(5) ID = 1.8 A.

(6) ID = 3.6 A.

Fig.11 Drain-source on-state resistance as a function

of gate-source voltage; typical values.

1998 Feb 11

7

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