2SB633 데이터 시트보기 (PDF) - SANYO -> Panasonic

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2SB633

NPN epitaxial planar silicon transistor, 85V/6A, AF 25 to 35W output application

SANYO -> Panasonic 

2SB633/2SD613

Parameter

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Brakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Fall Time

Storage Time

Symbol

Conditions

V(BR)CBO

V(BR)CEO

V(BR)CEO

V(BR)EBO

ton

IC=(–)5mA, IE=0

IC=(–)5mA, RBE=∞

IC=(–)50mA, RBE=∞

IE=(–)5mA, IC=0

See specified Test Circuit

tf

See specified Test Circuit

tstg

See specified Test Circuit

* : The 2SB633/2SD613 are classified by 1A hFE as follows :

40 C 80 60 D 120

100 E 200

160 F 320

Switching Time Test Circuit

Ratings

Unit

min

typ

max

(–)100

V

(–)85

V

(–)85

V

(–)6

V

(0.16)

µs

0.28

µs

(0.33)

µs

0.50

µs

(1.45)

µs

3.60

µs

No.513–2/4

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