BC635 BC637 BC639
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)
(IC = 500 mA, VCE = 2.0 V)
BC635
BC637
BC639
hFE
—
25
—
—
40
—
250
40
—
160
40
—
160
25
—
—
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
—
0.5
Vdc
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
—
—
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
fT
—
200
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
7.0
—
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
50
—
pF
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data