2SD1733(2011) View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
2SD1733 Datasheet PDF : 4 Pages
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2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Electrical characteristic curves
1000
Ta=25°C
VCE=5V
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
Ta=25°C
1.0
6mA
5mA
0.8
4mA
3mA
0.6
2mA
0.4
1mA
0.2
0
IB=0mA
0
2
4
6
8 10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
Ta=25°C
2.0
1.0
0.5
0.2
0.1
0.05
IC/IB=20/1
10/1
0.02
0.01
0
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
Ta=25°C
500
VCE=5V
200
100
50
20
10
5
2
1 2 5 10 20 50 100 200 500 1000
EMITTER CURRENT : −IE (mA)
Fig.5 Gain bandwidth product vs.
emitter current
10
5
2 Ic Max (Pulse)
1 DC
500m
200m
100m
50m
Ta=25°C
Single
non-repetitive
pulse
20m
10m
5m
2m
1m
0.1 0.2 0.5 1 2
5 10 20 50100 2005001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Safe operating area
(2SD1863)
10
5
2
1
500m
Ic Max (Pulse)
DC
200m
100m
50m
Ta=25°C
Single
non-repetitive
pulse
20m
10m
5m
2m
1m
0.1 0.2 0.5 1 2
5 10 20 50100200 5001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area
(2SD1898)
Data Sheet
1000
100
Ta=25°C
VCE=3V
1V
0
0
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector current
1000
100
Ta=25°C
f=1MHz
IE=0A
Ic=0A
10
1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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○c 2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.D
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