TIP47(2000) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
TIP47 Datasheet PDF : 4 Pages
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TIP47/48/49/50
High Voltage and Switching Applications
• High Sustaining Voltage : VCEO(sus) = 250 - 400V
• 1A Rated Collector Current
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: TIP47
: TIP48
: TIP49
: TIP50
VCEO
Collector-Emitter Voltage
: TIP47
: TIP48
: TIP49
: TIP50
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
1
TO-220
1.Base 2.Collector 3.Emitter
Value
350
400
450
500
250
300
350
400
5
1
2
0.6
40
2
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEX(sus)
Collector-Emitter Sustaining Voltage
: TIP47
: TIP48
: TIP49
: TIP50
IC = 30mA, IB = 0
ICEO
ICEX
IEBO
hFE
Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
* Pulse Test: PW≤300µs, duty Cycleµ2% Pulse
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VCE = 250V, IB = 0
VCE = 300V, IB = 0
VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 450V, VBE = 0
VCE = 500V, VBE = 0
VEB = 5V, IC = 0
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 10V, IC = 1A
VCE =10V, IC = 0.2A
VCC = 400V
5IB1 = -2.5IB2 = IC = 6A
RL = 66.7Ω
Min. Max. Units
250
V
300
V
350
V
400
V
1
mA
1
mA
1
mA
1
mA
1
mA
1
mA
1
mA
1
mA
1
mA
30 150
10
1
V
1.5
V
10
MHz
0.5
µs
3
µs
0.3
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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