PUMD48 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PUMD48 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN/PNP resistor-equipped transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
open emitter
open base
open collector
negative
input voltage TR2
positive
negative
IO
ICM
Ptot
Tstg
Tj
Tamb
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
Notes
1. Refer to SC-88 standard mounting conditions.
Product Specification
PUMD48
MIN.
MAX.
UNIT
−
50
V
−
50
V
−
10
V
−
+40
V
−
−10
V
−
+5
V
−
−12
V
−
100
mA
−
100
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
−
300
mW
1999 Apr 22
3
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