MPSW01 MPSW01A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
hFE
55
60
50
VCE(sat)
—
—
—
—
—
0.5
Vdc
Base–Emitter On Voltage
(IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT
50
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Cobo
—
20
pF
300
200
100
70
VCE = 1.0 V
50
TJ = 25°C
30
10
20
50
100 200
500 1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
0.4
IC =
0.2 10 mA
IC =
50 mA
IC =
1000 mA
IC =
IC =
100 mA
IC = 500 mA
250 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
IB, BASE CURRENT (mA)
10 20
50 100
Figure 2. Collector Saturation Region
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1.0 2.0
5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
–0.8
–1.2
–1.6
qVB FOR VBE
–2.0
–2.4
–2.8
1.0 2.0
5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficient
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data