MPSW01A View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MPSW01A Datasheet PDF : 4 Pages
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MPSW01 MPSW01A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
hFE
55
60
50
VCE(sat)
—
—
—
—
—
0.5
Vdc
Base–Emitter On Voltage
(IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
1.2
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT
50
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
20
pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
300
1.0
TJ = 25°C
200
0.8
100
70
50
30
10
VCE = 1.0 V
TJ = 25°C
20
50
100 200
500 1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
0.6
0.4
IC =
0.2 10 mA
IC =
50 mA
IC =
1000 mA
IC =
IC =
100 mA
IC = 500 mA
250 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
IB, BASE CURRENT (mA)
10 20
50 100
Figure 2. Collector Saturation Region
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1.0 2.0
5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
-0.8
-1.2
-1.6
qVB FOR VBE
-2.0
-2.4
-2.8
1.0 2.0
5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficient
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