MPSW51AG(2013) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MPSW51AG Datasheet PDF : 5 Pages
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MPSW51, MPSW51A
One Watt High Current
Transistors
PNP Silicon
Features
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
Vdc
MPSW51
−30
MPSW51A
−40
Collector −Base Voltage
VCBO
Vdc
MPSW51
−40
MPSW51A
−50
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
−5.0
−1000
1.0
8.0
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
2.5
W
Derate above 25°C
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125
°C/W
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
123
STRAIGHT LEAD
TO−92 1 WATT
1
2
3
(TO−226)
CASE 29−10
STYLE 1
BENT LEAD
MARKING DIAGRAM
MPS
W51x
AYWW G
G
x = 51A Devices
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
June, 2013 − Rev. 5
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MPSW51/D
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