MPSW51A(2006) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MPSW51A Datasheet PDF : 4 Pages
| |||
MPSW51 MPSW51A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
(IC = −1000 mAdc, VCE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = −1000 mAdc, IB = −100 mAdc)
hFE
55
60
50
VCE(sat)
—
Base −Emitter On Voltage
(IC = −1000 mAdc, VCE = −1.0 Vdc)
VBE(on)
—
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz)
fT
50
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
Max
—
—
—
−0.7
−1.2
—
30
Unit
—
Vdc
Vdc
MHz
pF
200
100
70
VCE = −1.0 V
50
TJ = 25°C
−1.0
−0.8
IC =
−10 mA
IC =
−50 mA
−0.6
IC = IC = IC =
IC =
−100 −250 −500 mA −1000 mA
mA mA
−0.4
20
−10
−20
−50 −100 −200
−500
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
−0.2
−1000
TJ = 25°C
0
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
IB, BASE CURRENT (mA)
−50 −100
Figure 2. Collector Saturation Region
−1.0
TJ = 25°C
−0.8
VBE(SAT) @ IC/IB = 10
−0.6
VBE(ON) @ VCE = −1.0 V
−0.4
−0.8
−1.2
−1.6
−2.0
qVB for VBE
−0.2
−2.4
VCE(SAT) @ IC/IB = 10
0
−1.0 −2.0
−5.0 −10 −20 −50 −100 −200 −500 −1000
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
−2.8
−1.0 −2.0
−5.0 −10 −20 −50 −100 −200 −500 −1000
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficient
http://onsemi.com
2
Share Link: 