S5PF30L View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

S5PF30L

P-channel 30V - 0.045Ω - 5A SO-8 STripFET™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STS5PF30L

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

Zero gate voltage

IDSS Drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

ID = 250 µA, VGS = 0

VDS = Max rating

VDS=Max rating,

TC=125°C

VGS = ± 16V

VDS = VGS, ID = 250µA

VGS = 10V, ID = 2.5A

VGS = 4.5V, ID = 2.5A

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs(1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS= 15V, ID =2.5A

VDS = 25V, f = 1 MHz,

VGS = 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 24V, ID = 5A,

VGS = 5V

(see Figure 14)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.

Min. Typ. Max. Unit

30

V

1 µA

10 µA

±100 nA

1

1.6 2.5 V

0.045 0.055 Ω

0.065 0.075 Ω

Min. Typ. Max. Unit

10

S

1350

pF

490

pF

130

pF

12.5 16 nC

5

nC

3

nC

4/12

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