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BSP304 View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BSP304 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistors
Product specification
BSP304; BSP304A
FEATURES
Direct interface to C-MOS, TTL etc.
High speed switching
No secondary breakdown.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a TO-92 variant package.
APPLICATIONS
Intended for use as a Line current interruptor in
telephone sets and for applications in relay, high speed
and line transformer drivers.
PINNING - TO-92 variant
PIN
SYMBOL
BSP304
1
g
2
d
3
s
BSP304A
1
s
2
g
3
d
DESCRIPTION
gate
drain
source
source
gate
drain
handbook, halfpage
1
2
3
d
g
MAM144
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL
VDS
VGSO
VGSth
ID
RDSon
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
Ptot
total power dissipation
CONDITIONS
open drain
ID = 1 mA; VDS = VGS
ID = 170 mA;
VGS = 10 V
up to Tamb = 25 °C
MIN.
1.7
MAX.
300
±20
2.55
170
17
UNIT
V
V
V
mA
1
W
1995 Apr 07
2

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