BSP304 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BSP304 Datasheet PDF : 9 Pages
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Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistors
Product specification
BSP304; BSP304A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
VGSO
ID
IDM
Ptot
Tstg
Tj
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open drain
up to Tamb = 25 °C; note 1
MIN.
−
−
−
−
−
−65
−
MAX.
−300
±20
−170
−0.75
1
+150
150
UNIT
V
V
mA
A
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
125
K/W
Note to the “Limiting values” and “Thermal characteristics”
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum 1 cm2.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
yfs
Ciss
Coss
Crss
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
Switching times (see Figs 2 and 3)
ton
turn-on time
toff
turn-off time
CONDITIONS
MIN.
VGS = 0; ID = −10 µA
−300
VDS = VGS; ID = −1 mA
−1.7
VGS = 0; VDS = −240 V
−
VGS = ±20 V; VDS = 0
−
VGS = −10 V; ID = −170 mA
−
VDS = −25 V; ID = −170 mA
100
VGS = 0; VDS = −25 V; f = 1 MHz −
VGS = 0; VDS = −25 V; f = 1 MHz −
VGS = 0; VDS = −20 V; f = 1 MHz −
TYP.
−
−
−
−
−
−
60
15
5
MAX. UNIT
−
V
−2.55 V
−100 nA
±100 nA
17
Ω
−
mS
90
pF
30
pF
15
pF
VGS = 0 to −10 V; VDD = −50 V; −
ID = −250 mA
VGS = −10 to 0 V; VDD = −50 V; −
ID = −250 mA
5
10
ns
15
30
ns
1995 Apr 07
3
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