BSP304A View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BSP304A Datasheet PDF : 9 Pages
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Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistors
60
haRndDbSoookn, halfpage
(Ω)
50
40
30
20
10
0
1
MLC692
VGS = 3 V 4 V 5 V
6V
7V
10 V
10
102 ID (mA) 103
Tj = 25 °C.
Fig.10 Drain-source on-state resistance as a
function of drain current; typical values.
Product specification
BSP304; BSP304A
1.1
handbook, halfpage
k
1.0
0.9
MLC696
0.8
50
0
50
100 Tj (o C) 150
k = -V----GV---S-G---t-Sh---t--ha---t-a--2--t--5-T---°-j-C----
Typical VGSth at ID = −1 mA; VDS =VGS.
Fig.11 Temperature coefficient of gate-source
threshold voltage.
2.5
handbook, halfpage
k
2
MLC695
1.5
1
0.5
0
50
0
50
100
150
Tj (oC)
k = R-----D-R---S-D--o--S-n--o--a-n---t-a--2--t-5--T---°-j--C----
Typical RDSon at ID = −170 mA; VGS = −10 V.
Fig.12 Temperature coefficient of drain-source
on-state resistance.
1995 Apr 07
6
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