FDS4435A View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

FDS4435A

P-Channel Logic Level PowerTrench® MOSFET

Fairchild Semiconductor 

Typical Characteristics



VGS= -10V

-6.0V



-4.5V

-4.0V



-3.5V



-3.0V



-2.5V





















-V DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

1.6

VGS = -10V

ID = -9A

1.4

1.2

1

0.8

0.6

-50

-25

0

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (OC)

Figure 3. On-Resistance Variation

with Temperature

40

VDS = -5V

30

20

TJ = -55OC

25OC

125OC

10

0

0

1

2

3

4

5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

2.4

2.2

2 VGS = -3.5V

1.8

-4.0V

1.6

-4.5V

-5.0V

1.4

-6.0V

1.2

-7.0V

-8.0V

1

-10V

0.8

0

10

20

30

40

50

-ID, DRAIN CURRENT (A)

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage

0.07

0.06

0.05

0.04

0.03

0.02

0.01

0

2

ID = -4.5A

TJ = 125OC

TJ = 25OC

4

6

8

10

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage

100

VGS = 0V

10

1

0.1

0.01

TA = 125oC

25oC

-55oC

0.001

0.0001

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature

FDS4435A Rev. D

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